FCD4N60 Fairchild Semiconductor, FCD4N60 Datasheet
FCD4N60
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FCD4N60 Summary of contents
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... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FCD4N60 Rev. B1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 32pF) This advanced technology has been tailored ...
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... J ≤ 3.9A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCD4N60 Rev. B1 Package Reel Size D-PAK 380mm D-PAK 380mm T = 25°C unless otherwise noted C Conditions ...
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... Drain Current [A] D Figure 5. Capacitance Characteristics 1200 1000 800 600 C oss C iss 400 200 C rss Drain-Source Voltage [V] DS FCD4N60 Rev. B1 Figure 2. Transfer Characteristics Notes : μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 1 ...
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... T = 150 Single Pulse Drain-Source Voltage [V] DS Figure 11-1. Transient Thermal Response Curve FCD4N60 Rev. B1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes : μ 250 A 0.5 D 0.0 100 150 200 -100 ο ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FCD4N60 Rev. B1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms FCD4N60 Rev www.fairchildsemi.com ...
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... Mechanical Dimensions FCD4N60 Rev. B1 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCD4N60 Rev. B1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...