FDH45N50F Fairchild Semiconductor, FDH45N50F Datasheet
FDH45N50F
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FDH45N50F Summary of contents
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... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FDH45N50F_F133 Rev. C Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...
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... DD G ≤ 45A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDH45N50F_F133 Rev. C Package Reel Size TO-247 - T = 25°C unless otherwise noted C Conditions 250μ ...
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... C oss 8000 C iss 6000 4000 C rss 2000 Drain-Source Voltage [V] DS FDH45N50F_F133 Rev. C Figure 2. Transfer Characteristics Notes : ∝ 1. 250 レ s Pulse Test 25∩ Figure 4. Body Diode Forward Voltage Variation vs. Source Current 2 ...
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... Drain-Source Voltage [V] DS Figure 11. Typical Drain Current Slope vs. Gate Resistance 4,000 3,500 3,000 2,500 di/dt(on) 2,000 1,500 di/dt(off) 1,000 500 Gate resistance [ G FDH45N50F_F133 Rev. C (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 10 ...
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... R , Gate resistance [ G Figure 15. Transient Thermal Resistance Curve - FDH45N50F_F133 Rev. C (Continued) Figure 14. Unclamped Inductive Switching 100 Eoff Starting T 10 Eon Notes : 400 25A 125 C ...
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... Mechanical Dimensions FDH45N50F_F133 Rev. C TO-247AB 6 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDH45N50F_F133 Rev. C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...