FDD5N50 Fairchild Semiconductor, FDD5N50 Datasheet

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FDD5N50

Manufacturer Part Number
FDD5N50
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2007 Fairchild Semiconductor Corporation
FDD5N50 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD5N50
N-Channel MOSFET
500V, 4A, 1.4Ω
Features
• R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.15Ω ( Typ.)@ V
( Typ. 5pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
D-PAK
= 10V, I
D
= 2A
T
D
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
500
±30
256
300
110
2.4
4.5
0.3
1.4
16
40
4
4
4
S
D
December 2007
UniFET
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDD5N50 Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD5N50 Rev. A Description = 2A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... DD G ≤ 4A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD5N50 Rev unless otherwise noted C Package Reel Size D-PAK 380mm D-PAK 380mm ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 750 500 250 0 0 Drain-Source Voltage [V] DS FDD5N50 Rev. A Figure 2. Transfer Characteristics *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage = 10V V ...

Page 4

... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on) 0.1 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDD5N50 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 µ 250 A D 0.0 75 125 175 Figure 10. Maximum Drain Current 4.5 µ ...

Page 5

... FDD5N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDD5N50 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + ...

Page 7

... Mechanical Dimensions FDD5N50 Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD5N50 Rev. A FPS™ PDP-SPM™ ® ® FRFET Power220 ® SM Global Power Resource Power247 Green FPS™ ...

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