FDD5N50U Fairchild Semiconductor, FDD5N50U Datasheet - Page 2

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FDD5N50U

Manufacturer Part Number
FDD5N50U
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DOMS technology
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD5N50U
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDD5N50UTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
FDD5N50U Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 61mH, I
3: I
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BVDSS
∆BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
∆T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
J
DSS
≤ 3A, di/dt ≤ 200A/µs, V
FDD5N50U
FDD5N50U
AS
= 3A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain to Source Breakdown Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDD5N50UTM
FDD5N50UTF
G
DSS
= 25Ω, Starting T
Device
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
D-PAK
D-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
380mm
380mm
D
= 1.5A
= 3A
= 5A
GS
C
= 1.5A
DS
= 250µA
= 5A
= 5A
= 125
= 0V
= 0V, T
o
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
16mm
16mm
Min.
500
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.65
485
0.6
14
21
27
20
36
33
65
11
4
5
3
5
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
250
650
2500
2000
1.6
38
52
64
50
25
90
15
12
8
3
-
-
5
2
-
-
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
nA
ns
ns
ns
ns
ns
nC
V
A
A
V
V
S
o
C

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