FDB12N50U Fairchild Semiconductor, FDB12N50U Datasheet

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FDB12N50U

Manufacturer Part Number
FDB12N50U
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2012 Fairchild Semiconductor Corporation
FDB12N50U Rev.C0
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDB12N50U
N-Channel MOSFET, FRFET
500V, 10A, 0.8Ω
Features
• R
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
= 0.65Ω ( Typ.)@ V
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
GS
TO-263AB
FDB Series
D
= 10V, I
D
2
-PAK
D
= 5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
S
D
16.5
1.33
±30
0.75
62.5
500
456
165
300
10
40
10
20
6
UniFET
January 2012
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

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FDB12N50U Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FDB12N50U Rev.C0 Description = 5A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... G ≤ 10A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB12N50U Rev. unless otherwise noted C Package Reel Size D2-PAK 330mm Test Conditions I = 250μ ...

Page 3

... Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 C iss 1000 C oss 500 C rss 0 0 Drain-Source Voltage [V] DS FDB12N50U Rev.C0 Figure 2. Transfer Characteristics 30 10 *Notes: 1. 250 μ s Pulse Test 4 Figure 4. Body Diode Forward Voltage 100 10 ...

Page 4

... Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FDB12N50U Rev.C0 (Continued) Figure 8. Maximum Safe Operating Area 100 *Notes μ 250 A D 0.01 100 150 200 100 125 150 ...

Page 5

... FDB12N50U Rev.C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB12N50U Rev.C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDB12N50U Rev.C0 Dimensions in Millimeters 7 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB12N50U Rev.C0 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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