IRFM120A Fairchild Semiconductor, IRFM120A Datasheet - Page 4

• Manufacturer Part Number: IRFM120A
• Manufacturer: Fairchild Semiconductor

IRFM120A
1 0
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
-2
2
1
0
1 0
- 7 5
-1
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
Fig 9. Max. Safe Operating Area
- 2 5
T
V
J
@ N o t e s :
DS
1 . T
2 . T
3 . S i n g l e P u l s e
, Junction Temperature [
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
, Drain-Source Voltage [V]
1 0
0
10
0
A
J
10
10
10
= 2 5
= 1 5 0
- 1
2
1
0
10
2 5
- 5
o
C
o
0.1
0.05
0.02
0.2
0.01
D=0.5
C
D C
5 0
DS(on)
10
1 0 0 m s
7 5
1 0
- 4
single pulse
1
t
1 0 m s
1
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
1 m s
1 . V
2 . I
10
o
C]
1 0 0
- 3
1 2 5
GS
D
= 2 5 0
"
= 0 V
Fig 11. Thermal Response
s
1 5 0
1 0
"
A
2
10
1 0
"
- 2
s
1 7 5
10
- 1
Fig 10. Max. Drain Current vs. Ambient Temperature
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
- 7 5
2 5
10
@ Notes :
0
1. Z
2. Duty Factor, D=t
3. T
P
Fig 8. On-Resistance vs. Temperature
- 5 0
DM
!
J M
J A
-T
- 2 5
5 0
(t)=52
10
T
A
T
J
t
1
=P
A
[sec]
1
, Junction Temperature [
, Ambient Temperature [
t
D M
0
2
*Z
o
C/W Max.
!
J A
10
2 5
7 5
(t)
2
1
/t
5 0
2
POWER MOSFET
10
N-CHANNEL
1 0 0
7 5
3
1 0 0
@ N o t e s :
1 . V
2 . I
o
o
C]
C]
GS
D
1 2 5
1 2 5
= 4 . 6 A
= 1 0 V
1 5 0
1 7 5
1 5 0