FQN1N60C Fairchild Semiconductor, FQN1N60C Datasheet - Page 3
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FQN1N60C
Manufacturer Part Number
FQN1N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?s proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQN1N60C.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQN1N60CTA
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FQN1N60CTA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FQN1N60C Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
250
200
150
100
30
25
20
15
10
50
Drain Current and Gate Voltage
-1
-2
0
5
0
0
10
0.0
10
-1
-1
Top :
Bottom : 4.5 V
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
0.5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
1.0
0
C
V
C
C
oss
GS
iss
rss
= 10V
1.5
C
C
C
iss
oss
rss
V
10
= C
10
= C
= C
GS
※
※
1
1
gs
ds
gd
1. 250µ s Pulse Test
2. T
= 20V
Notes :
Note : T
+ C
+ C
2.0
C
gd
= 25 ℃
gd
(C
※
J
1. V
2. f = 1 MHz
ds
Notes ;
= 25 ℃
= shorted)
GS
= 0 V
2.5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
-1
-1
0.2
0
12
10
0
8
6
4
2
0
2
0
Variation vs. Source Current
25
o
C
0.4
150
V
1
SD
and Temperatue
o
C
, Source-Drain voltage [V]
4
V
V
150
DS
V
GS
Q
DS
0.6
= 120V
, Gate-Source Voltage [V]
G
℃
= 300V
2
, Total Gate Charge [nC]
V
DS
25
= 480V
℃
-55
0.8
o
C
6
3
※
Note : I
※
1.0
D
※
= 1.1A
4
Notes :
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
DS
GS
8
= 40V
= 0V
1.2
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5
1.4
10
6