FDB44N25 Fairchild Semiconductor, FDB44N25 Datasheet

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FDB44N25

Manufacturer Part Number
FDB44N25
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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FDB44N25TM
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©2005 Fairchild Semiconductor Corporation
FDB44N25 Rev A
FDB44N25
250V N-Channel MOSFET
Features
• 44A, 250V, R
• Low gate charge ( typical 47 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
rss
( typical 60 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.069Ω @V
G
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
D
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
G
--
--
--
FDB44N25
-55 to +150
2055
26.4
30.7
2.45
250
176
±30
307
300
4.5
44
44
S
D
UniFET
Max.
0.41
62.5
40
September 2005
www.fairchildsemi.com
Unit
W/°C
V/ns
mJ
mJ
Unit
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
TM

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FDB44N25 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FDB44N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... G ≤ 44A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB44N25 Rev A Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... Figure 5. Capacitance Characteristics 6000 5000 4000 C oss C iss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS FDB44N25 Rev A Figure 2. Transfer Characteristics Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage ...

Page 4

... V , Drain-Source Voltage [ FDB44N25 Rev A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : 250 µ 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current 50 µ ...

Page 5

... 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDB44N25 Rev A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB44N25 Rev A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDB44N25 Rev A D2-PAK 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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