FDB52N20 Fairchild Semiconductor, FDB52N20 Datasheet - Page 4

• Manufacturer Part Number: FDB52N20
• Manufacturer: Fairchild Semiconductor

FDB52N20 Rev. A
Typical Performance Characteristics
10
10
10
10
10
10
-1
-2
3
2
1
0
Figure 9. Maximum Safe Operating Area
10
1.2
1.1
1.0
0.9
0.8
Figure 7. Breakdown Voltage Variation
-100
0
-50
Operation in This Area
is Limited by R
vs. Temperature
V
T
DS
J
, Junction Temperature [
, Drain-Source Voltage [V]
0
DS(on)
10
1
1 0
1 0
-1
-2
1 0
50
-5
Figure 11. Transient Thermal Response Curve
DC
D = 0 .5
0 .0 1
0 .0 2
0 .0 5
100 ms
0 .2
0 .1
* Notes :
10 ms
1. T
2. T
3. Single Pulse
100
C
J
1 0
°
1 ms
= 150
= 25
C]
s in g le p u ls e
10
-4
* Notes :
100
°
2
1. V
2. I
C
°
C
t
D
1
GS
µ
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
= 250
s
150
= 0 V
10
µ
A
µ
s
1 0
-3
200
(Continued)
4
1 0
-2
60
50
40
30
20
10
0
25
* N o te s :
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
-100
DM
Figure 10. Maximum Drain Current
1 0
θ
J M
J C
Figure 8. On-Resistance Variation
-1
(t) = 0 .3 5
- T
C
= P
t
vs. Case Temperature
1
50
t
-50
2
D M
°
C /W M a x .
* Z
1 0
1
T
/t
θ
vs. Temperature
J C
C
2
T
0
, Case Temperature [
(t)
J
, Junction Temperature [
0
75
1 0
50
1
100
°
100
C]
°
C]
125
* Notes :
1. V
2. I
150
www.fairchildsemi.com
D
GS
= 26 A
= 10 V
150
200