FQB7N60 Fairchild Semiconductor, FQB7N60 Datasheet - Page 3

• Manufacturer Part Number: FQB7N60
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1600
1200
800
400
10
10
10
2.5
2.0
1.5
1.0
0.5
0.0
0
-1
10
1
0
10
-1
-1
0
Top :
Bottom : 5.5 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
Drain Current and Gate Voltage
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
10
C
C
C

Notes :
oss
rss
iss
1. 250  s Pulse Test
2. T
V
GS
C
V
= 25 
= 20V
GS
= 10V
15
C
C
C
iss
oss
rss
= C
= C
= C
10
10

Note : T
gs
gd
ds
1
1
+ C
+ C
20

Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
= shorted)
= 25 
= 0 V
25
10
10
10
10
10
10
-1
-1
12
10
1
0
1
0
0.2
2
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
5
Variation vs. Source Current
25

150

0.4
150

4
Q
V
10
V
G
SD
and Temperature
GS
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
0.6
V
V
DS
V
DS
15
25

DS
= 480V
= 300V
= 120V
-55

6
20
0.8
25

Notes :

Notes :
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
= 50V
1.0
Rev A1 October 2008
= 0V
D
30
= 7.4A
35
1.2
10