FQB8N60C Fairchild Semiconductor, FQB8N60C Datasheet
FQB8N60C
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FQB8N60C Summary of contents
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... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQB8N60C / FQI8N60C Units 600 V 7 230 mJ 7.5 A 14.7 mJ 4.5 V/ns 3.13 W ...
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... 7.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 600 V, V ...
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... C oss 800 600 C rss 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics 10V ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 -100 100 150 200 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...
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... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A1, October 2008 ...
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... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A1, October 2008 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB8N60C / FQI8N60C Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...