FQD2N60C Fairchild Semiconductor, FQD2N60C Datasheet - Page 4

• Manufacturer Part Number: FQD2N60C
• Manufacturer: Fairchild Semiconductor

FQD2N60C/FQU2N60C Rev. B3
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
Figure 11. Typical Drain Current Slope
-1
-2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
-50
vs. Gate Resistance
vs. Temperature
V
10
T
DS
1
J
, Drain-Source Voltage [V]
, Junction Temperature [
0
Operation in This Area
is Limited by R
1 0
※
1 0
1. T
2. T
3. Single Pulse
Notes :
-1
1 0
0
C
J
= 150
= 25
-5
o
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
C
o
0 .2
0 .1
50
DS(on)
C
DC
100 ms
10
10 ms
2
100
s in g le p u ls e
1 ms
1 0
o
C]
-4
100 s
※
1. V
2. I
Notes :
t
D
G S
1
= 250 µA
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
150
= 0 V
10
3
1 0
-3
200
(Continued)
4
1 0
-2
Figure 12. Typical Drain-Source Voltage
2.0
1.6
1.2
0.8
0.4
0.0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
-100
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
N o te s :
-1
P
θ J C
J M
Slope vs. Gate Resistance
DM
- T
( t) = 2 .8 7
C
vs. Case Temperature
50
-50
= P
D M
t
vs. Temperature
1
℃
* Z
t
1 0
T
2
T
C
/W M a x .
1
, Case Temperature [ ]
θ J C
J
/t
0
, Junction Tem perature [
2
0
(t)
75
50
1 0
100
1
℃
100
o
C]
125
※
1. V
2. I
Notes :
150
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D
G S
= 0.95 A
= 10 V
150
200