FQI8N60C Fairchild Semiconductor, FQI8N60C Datasheet - Page 4

• Manufacturer Part Number: FQI8N60C
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
Operation in This Area
is Limited by R
T
vs Temperature
V
J
, Junction Temperature [
10
DS
0
1 0
1 0
DS(on)
1
1 0
, Drain-Source Voltage [V]
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
o
D = 0 .5
0 . 0 5
0 . 0 2
0 . 0 1
0 . 2
0 . 1
C
o
50
C
DC
Figure 11. Transient Thermal Response Curve
100 ms
10
s in g le p u ls e
(Continued)
10 ms
1 0
100
2
o
- 4
C]
1 ms
※ Notes :
t
100 s
1. V
2. I
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
D
G S
150
= 250 μ A
= 0 V
10 s
1 0
10
- 3
3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
25
-100
Figure 10. Maximum Drain Current
1 0
Figure 8. On-Resistance Variation
※ N o te s :
- 1
1 . Z
2 . D u t y F a c to r, D = t
3 . T
P
-50
DM
θ J C
J M
50
- T
( t) = 0 . 8 5 ℃ /W M a x .
vs Case Temperature
C
= P
T
T
t
J
vs Temperature
C
1
, Junction Temperature [
1 0
, Case Temperature [ ℃ ]
D M
t
0
2
0
* Z
75
1
/t
θ J C
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 4 A
= 10 V
Rev. A, October 2008
150
200