FQB47P06 Fairchild Semiconductor, FQB47P06 Datasheet

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FQB47P06

Manufacturer Part Number
FQB47P06
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FQB47P06/FQI47P06 Rev. A3
FQB47P06 / FQI47P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
, T
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -47A, -60V, R
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
FQI Series
I
2
-PAK
FQB47P06 / FQI47P06
DS(on)
Typ
--
--
--
-55 to +175
= 0.026Ω @V
-33.2
-188
3.75
1.06
± 25
820
-7.0
160
300
-60
-47
-47
16
G
Max
0.94
62.5
40
GS
S
D
= -10 V
October 2008
QFET
www.fairchildsemi.com
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQB47P06 Summary of contents

Page 1

... C Parameter = 25° 100°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° 25°C) C Parameter October 2008 QFET = 0.026Ω -10 V DS(on FQB47P06 / FQI47P06 Units -60 V -47 A -33.2 A -188 A ± 820 mJ - -7.0 V/ns 3.75 W 160 W 1.06 W/°C -55 to +175 ° ...

Page 2

... G ≤ -47A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 5. Essentially independent of operating temperature FQB47P06/FQI47P06 Rev 25°C unless otherwise noted C Test Conditions = -250 µ -250 µA, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 8000 7000 6000 C oss 5000 C iss 4000 3000 C rss 2000 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics FQB47P06/FQI47P06 Rev 175 Notes : 1. 250 µ s Pulse Test ...

Page 4

... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area FQB47P06/FQI47P06 Rev. A3 (Continued) 2.5 2.0 1.5 1.0 * Notes : 0 -250 µ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB47P06/FQI47P06 Rev. A3 Gate Charge Test Circuit & Waveform www.fairchildsemi.com ...

Page 6

... FQB47P06/FQI47P06 Rev ...

Page 7

... Mechanical Dimensions FQB47P06/FQI47P06 Rev PAK Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FQB47P06/FQI47P06 Rev PAK Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQB47P06/FQI47P06 Rev. A3 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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