FQT5P10 Fairchild Semiconductor, FQT5P10 Datasheet
FQT5P10
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FQT5P10 Summary of contents
Page 1
... S G SOT-223 FQT Series T = 25°C unless otherwise noted C Parameter = 25° 70°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter QFET = 1. -10 V DS(on FQT5P10 Units -100 V -1.0 A -0 -1.0 A 0.2 mJ -6.0 V/ns 2.0 W 0.016 W/°C -55 to +150 °C 300 °C Typ ...
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... ≤ -4.5A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25°C ...
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... C oss C 350 iss 300 250 200 C rss 150 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 0 10 150℃ 25℃ Figure 2. Transfer Characteristics 0 10 150℃ ※ Note : T = 25℃ 0.0 0.5 Figure 4 ...
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... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : -250 μ 0.5 D 0.0 100 150 200 -100 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT ...
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... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2002 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. B, August 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...