FQB5N90 Fairchild Semiconductor, FQB5N90 Datasheet - Page 3

• Manufacturer Part Number: FQB5N90
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor International
Typical Characteristics
2200
2000
1800
1600
1400
1200
1000
10
10
800
600
400
200
10
10
-1
-2
5
4
3
2
1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
3
GS
V
V
DS
DS
, Drain-Source Voltage [V]
6
, Drain-Source Voltage [V]
V
I
10
D
10
GS
, Drain Current [A]
C
C
C
0
0
iss
rss
= 20V
oss
V
9
GS
= 10V
12
C
C
C
iss
oss
rss
= C
※ Notes :
= C
= C
10
10
1. 250μ s Pulse Test
2. T
gs
※ Note : T
ds
gd
1
1
+ C
+ C
C
= 25℃
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
15
ds
GS
J
= shorted)
= 0 V
= 25℃
18
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current and
5
0.4
25
150℃
150
4
o
C
V
V
10
Q
o
GS
SD
C
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
Temperature
V
V
DS
0.6
V
DS
= 720V
DS
15
= 450V
= 180V
25℃
6
20
-55
0.8
o
C
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.0
= 50V
= 0V
D
30
= 5.4 A
Rev. A1, Oct 2008
1.2
10
35