FQD8P10 Fairchild Semiconductor, FQD8P10 Datasheet - Page 4
FQD8P10
Manufacturer Part Number
FQD8P10
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQU8P10.pdf
(9 pages)
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©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
1 0
0
C
J
= 150
= 25
10
- 5
1
0 .0 2
o
D = 0 .5
0 .0 1
0 .0 5
C
DS(on)
o
0 .2
0 .1
50
C
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
1 ms
o
s i n g l e p u ls e
- 4
C]
※ Notes :
1. V
2. I
t
100 s
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= -250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
P
θ J C
J M
-50
DM
- T
( t) = 2 .8 4 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
* Z
2
1
0
θ
/t
75
2
J C
( t)
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -3.3 A
= -10 V
Rev. B, August 2002
200
150