FQD3P50 Fairchild Semiconductor, FQD3P50 Datasheet - Page 4
FQD3P50
Manufacturer Part Number
FQD3P50
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQD3P50.pdf
(9 pages)
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©2009 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
1 0
1 0
※ Notes :
1
1 0
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
0 .0 2
0 .0 5
0 .0 1
D = 0 . 5
o
C
0 .1
o
0 .2
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
DC
s in g le p u ls e
10 ms
100
10
1 0
(Continued)
2
o
- 4
C]
1 ms
※ Notes :
1. V
2. I
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
100 s
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
3
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
1 0
- 1
P
θ J C
J M
-50
DM
- T
( t ) = 2 . 5 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
T
J
t
D M
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
75
θ J C
/t
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -1.35 A
= -10 V
Rev. A2, January 2009
200
150