BTS 7930B Infineon Technologies, BTS 7930B Datasheet - Page 3
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BTS 7930B
Manufacturer Part Number
BTS 7930B
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS_7930B.pdf
(28 pages)
Specifications of BTS 7930B
Packages
P-TO263-7
Operating Range
5.5 - 28.0 V
Rds (on) (typ)
28.0 mOhm
Id(lim)
31.0 A
Iq (typ)
7.0 µA
Diagnosis
OV, OT, OC-failure flag, current sense
High Current PN Half Bridge
NovalithIC
Product Summary
The BTS 7930B is a fully integrated high current half
bridge for motor drive applications. It is part of the
NovalithIC
MOSFET and one n-channel lowside MOSFET with an
integrated driver IC in one package. Due to the p-channel
highside switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is
made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit.
The BTS 7930B provides a cost optimized solution for protected high current PWM
motor drives with very low board space consumption.
Basic Features
• Path resistance of typ. 28 mΩ @ 25 °C
• Low quiescent current of typ. 7 µA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 30 A typ.
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
Type
BTS 7930B
Data Sheet
TM
TM
family containing one p-channel highside
Package
P-TO-263-7
2
P-TO-263-7
BTS 7930B
Rev. 2.0, 2006-06-01
BTS 7930B