BTS 640S2G Infineon Technologies, BTS 640S2G Datasheet - Page 9
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BTS 640S2G
Manufacturer Part Number
BTS 640S2G
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS_640S2G.pdf
(17 pages)
Specifications of BTS 640S2G
Packages
PG-TO263-7
Channels
1.0
Ron @ Tj = 25°c
30.0 mOhm
Recommended Operating Voltage Min.
5.0 V
Recommended Operating Voltage Max.
34.0 V
Il(sc)
40.0 A
Data Sheet
Overvoltage protection of logic part
V
R
Reverse battery protection
The load R
not active
R
R
Open-load detection
OFF-state diagnostic condition: V
Z1
GND
GND
V
≥ 500 Ω,
= 6.1 V typ., V
= 150 Ω, R
= 150 Ω, R
L
is inverse on, temperature protection is
ST
I
= 4 kΩ typ, R
Z2
= 15 kΩ, R
= 47 V typ., R
IS
ST
= 1 kΩ, R
OUT
≥ 500 Ω, R
I
= 4 kΩ typ,
> 3 V typ.; IN low
V
= 15 kΩ,
IS
≥ 200 Ω,
GND disconnect
Any kind of load. In case of Input=high is V
Due to V
GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
Normal load current can be handled by the PROFET
itself.
9
bb
disconnect with energized inductive
GND
GND
>0, no V
>0, no V
Smart High-Side Power Switch
GND >
ST
ST
= low signal available.
= low signal available.
V
IN
- V
IN(T+)
device stays off
OUT
≈ V
IN
BTS640S2G
V1.1, 2008-19-08
- V
IN(T+)
.