BTS 410-F2 Infineon Technologies, BTS 410-F2 Datasheet - Page 8

• Manufacturer Part Number: BTS 410-F2
• Manufacturer: Infineon Technologies

Specifications of BTS 410-F2

• Packages: P-TO220-5
• Channels: 1.0
• Ron @ Tj = 25°c: 220.0 mOhm
• Recommended Operating Voltage Min.: 4.7 V
• Recommended Operating Voltage Max.: 42.0 V
• Il(sc): 2.7 A

GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
Normal load current can be handled by the PROFET
itself.
V
inductive load
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Semiconductor Group
bb
bb
V
bb
high
V
V
disconnect with energized inductive
disconnect with charged external
bb
bb
GND
high
2
>0, no V
4
IN
ST
V
S
IN
V
GND >
2
2
4
4
ST
ST
PROFET
IN
ST
IN
ST
GND
= low signal available.
3
1
V
V
bb
IN
- V
PROFET
PROFET
GND
GND
3
3
1
1
V
IN(T+)
V
OUT
bb
bb
V
GND
device stays off
5
OUT
OUT
5
5
D
8
Inductive Load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R
Maximum allowable load inductance for
a single switch off
L = f (I
L [mH]
V
=
10000
bb
1000
E
100
= 12 V, R
AS
L
E
1.5
); T
=
bb
E
2
I
AS
L
·
j,start
·
R
= E
L
L
L
1.75
·
(
= 0
V
bb
= 150°C,T
IN
ST
bb
+ E
+ |V
E
L
PROFET
L
2
OUT(CL)
- E
GND
=
V
bb
1 /
C
R
2
= V
= 150°C const.,
2.25
·
L
|)
·
I
·
OUT
2
L
ON(CL)
ln
L
(1+
E AS
2.5
Z L
0 :
BTS 410 F2
·
{
i
|V
L
(t) dt,
R L
OUT(CL)
L
I
2003-Oct-01
L
2.75
·
R
L
E
I L [A]
E
E Load
|
R
)
L
3