BTS 3256D Infineon Technologies, BTS 3256D Datasheet - Page 17

• Manufacturer Part Number: BTS 3256D
• Manufacturer: Infineon Technologies

Specifications of BTS 3256D

• Packages: PG-TO252-5
• Channels: 1.0
• Vds (max): 40.0 V
• Id(nom): 7.5 A
• Rds (on) (max): 10.0 mOhm
• Id(lim) (min): 42.0 A

6.4
V
All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Power Supply
6.4.1
6.4.2
6.4.3
6.4.4
6.4.5
6.4.6
6.4.7
6.4.8
6.4.9
Datasheet
Dynamic Characteristics
Timings with fastest slew rate setting
S
= 5.5 V to 30 V,
Parameter
On-state resistance
Nominal load current
ISO load current
Off state drain current
power up settling time
Turn-on delay
Turn-on time
Turn-off delay
Electrical Characteristics - Power Stage
T
j
= -40 C to +150 C
1)
1)
Symbol
R
I
I
I
t
t
t
t
init
ond_fast
on_fast
offd_fast
D(nom)
D(ISO)
DSS
DS(on)
17
Min.
–
–
7.5
31
–
–
–
–
–
4
Limit Values
Typ.
10
16
8.7
33
6
1
10
4
11
10
Smart Low Side Power Switch
Max.
–
20
–
–
12
2
25
10
22
15
Unit
m
m
A
A
µs
A
A
s
s
s
1)
HITFET - BTS 3256D
Rev. 1.0, 2009-05-05
Conditions
T
I
V
V
T
I
V
V
T
T
V
V
V
T
T
V
V
V
V
V
T
V
V
Vs > 6V
first rising edge on
IN pin.
R
R
V
see
R
R
V
see
R
R
V
see
D
D
J
J
J
A
J
C
J
IN
S
IN
S
IN
S
DS
IN
S
DS
D
IN
D
IN
L
SRP
bb
L
SRP
bb
L
SRP
bb
= 20 A;
= 20 A;
= 25 C;
= 150 C;
< 150 C;
< 150 C;
= 85 C;
= 2.2 ;
= 2.2 ;
= 2.2 ;
= 85 C;
= 10 V
= 10 V
85 C SMD
= 32 V;
= 13.5 V;
= high
= high
= high;
= high
= low
= low
= V
= V
= V
= 0.5 V
= 0.5 V;
Figure 10
Figure 10
Figure 10
10 V;
10 V;
= OPEN;
= OPEN;
= OPEN;
S
S
S
Power Stage
= 13.5 V;
= 13.5 V;
= 13.5 V;
2)
;