BTS 3118N Infineon Technologies, BTS 3118N Datasheet - Page 4

• Manufacturer Part Number: BTS 3118N
• Manufacturer: Infineon Technologies

Specifications of BTS 3118N

• Packages: PG-SOT223-4
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 2.17 A
• Rds (on) (max): 100.0 mOhm
• Id(lim) (min): 10.0 A

Datasheet
1 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Electrical Characteristics
Parameter
at T
Inverse Diode
Inverse diode forward voltage
I
t
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Input current protection mode
Input current protection mode
T
Unclamped single pulse inductive energy
I
F
P
D
j
L
L
L
L
= 10.9 A, t
= 150 °C
= 300 µs
= 2.17 A, T
= 4.7
= 4.7
= 4.7
= 4.7
j
= 25°C, unless otherwise specified
, V
, V
, V
, V
m
IN
IN
IN
IN
j
= 25 °C, V
= 250 µs, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
1)
bb
IN
= 12 V
= 0 V,
D
D
bb
bb
bb
bb
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
2)
4
V
Symbol
t
t
-dV
dV
T
I
I
E
IN(Prot)
IN(Prot)
on
off
jt
SD
AS
DS
DS
/dt
/dt
off
on
Smart Low Side Power Switch
min.
150
250
60
-
-
-
-
-
-
Values
typ.
120
100
175
0.4
0.6
HITFET BTS 3118N
40
70
1
-
Rev. 1.3, 2008-04-14
max.
300
300
100
100
1.5
1.5
-
-
-
V
Unit
µs
V/µs
°C
µA
mJ