BTS 118D Infineon Technologies, BTS 118D Datasheet - Page 2

• Manufacturer Part Number: BTS 118D
• Manufacturer: Infineon Technologies

Specifications of BTS 118D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 2.4 A
• Rds (on) (max): 100.0 mOhm
• Id(lim) (min): 10.0 A

Datasheet
Thermal resistance
junction - case:
SMD: junction - ambient
@ min. footprint
@ 6 cm
Electrostatic discharge voltage
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Maximum Ratings at T
Parameter
Drain source voltage
Supply voltage for full short circuit protection
Continuous input voltage
Continuous input current
-0.2V £ V
V
Operating temperature
Storage temperature
Power dissipation
T
6cm
Unclamped single pulse inductive energy
Load dump protection V
V
R
1 For input voltages beyond these limits I
2 not subject to production test, specified by design
3 V
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
5 not subject to production test, calculated by R
connection. PCB mounted vertical without blown air.
C
IN
IN
L
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
= 6 W, V
= 85 °C
< -0.2V or V
= 0 and 10 V, t
2
cooling area , T
2
cooling area
IN
A
£ 10V
= 13.5 V
IN
5)
> 10V
d
= 400 ms, R
A
4)
= 85 °C
j
LoadDump
2)
1)
= 25°C, unless otherwise specified
2)
I
(Human Body Model)
2)3)
= 2 W,
IN
has to be limited.
= V
thJA and R ds(on)
A
2)
+ V
2
S
R
R
Symbol
V
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
bb(SC)
IN
tot
AS
LD
ESD
thJC
thJA
Smart Low Side Power Switch
Power HITFET BTS 118D
self limited
-55 ... +150
-0.2
-40 ...+150
| I
Value
IN
115
1.1
55
21
42
42
58
2)
3
2
2
| £ 2
... +10
Rev. 1.3, 2006-12-22
K/W
Unit
V
mA
°C
W
J
V
kV