BTS 3110N Infineon Technologies, BTS 3110N Datasheet - Page 4

• Manufacturer Part Number: BTS 3110N
• Manufacturer: Infineon Technologies

Specifications of BTS 3110N

• Packages: PG-SOT223-4
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 1.4 A
• Rds (on) (max): 220.0 mOhm
• Id(lim) (min): 5.0 A

Datasheet
1 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Electrical Characteristics
Parameter
at T
Inverse Diode
Inverse diode forward voltage
I
t
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Input current protection mode
Input current protection mode
T
Unclamped single pulse inductive energy
I
F
P
D
j
L
L
L
L
= 7 A, t
= 150 °C
= 300 µs
= 1.4 A, T
= 4.7
= 4.7
= 4.7
= 4.7
j
= 25°C, unless otherwise specified
m
, V
, V
, V
, V
= 250 µs, V
j
IN
IN
IN
IN
= 25 °C, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
1)
IN
bb
= 0 V,
= 12 V
D
D
bb
bb
bb
bb
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
2)
4
V
Symbol
t
t
-dV
dV
T
I
I
E
IN(Prot)
IN(Prot)
on
off
jt
SD
AS
DS
DS
/dt
/dt
off
on
Smart Low Side Power Switch
min.
150
150
25
-
-
-
-
-
-
Values
typ.
175
0.4
0.6
HITFET BTS 3110N
45
60
50
40
1
-
Rev. 1.3, 2008-04-14
max.
300
300
100
100
1.5
1.5
-
-
-
V
Unit
µs
V/µs
°C
µA
mJ