BSP 75N Infineon Technologies, BSP 75N Datasheet - Page 7

• Manufacturer Part Number: BSP 75N
• Manufacturer: Infineon Technologies

Specifications of BSP 75N

• Packages: PG-SOT223-4
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 0.7 A
• Rds (on) (max): 550.0 mOhm
• Id(lim) (min): 1.0 A

EMC-Characteristics
The following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.
Table 1
Parameter
Temperature
Supply Voltage
Load
Operation mode
DUT specific
Fast electrical transients
acc. to ISO 7637
1)
Definition of functional status
Data Sheet Rev. 1.4
Test
Pulse
The test pulses are applied at V
3a
3b
Class
1
2
4
5
C
E
1)
+200V
+200V
-200V
-200V
Level
175V
Max.
Test
Test Conditions
-7V
Content
All functions of the device are performed as designed after exposure to
disturbance.
One or more function of a device does not perform as designed after
exposure and can not be returned to proper operation without repairing
or replacing the device. The value after the character shows the limit.
Test Result
S
E(65V)
ON
C
C
C
C
C
OUT
Symbol
T
V
R
PWM
DC
V
A
S
IN
L
(’HIGH’)=5V
x
stressed
7
Value
23 ±5
13.5
27
–
–
E(75V)
OFF
C
C
C
C
C
Unit
°C
V
Ω
–
–
HITFET
Pulse Cycle Time
–
–
ohmic
f
ON / OFF
and Generator
Remark
INx
500ms ; 10Ω
500ms ; 10Ω
100ms ; 50Ω
100ms ; 50Ω
Impedance
400ms ; 2Ω
=100Hz, D=0.5
0.01Ω

BSP 75N
2008-07-10