TLE 7259G Infineon Technologies, TLE 7259G Datasheet - Page 12

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TLE 7259G

Manufacturer Part Number
TLE 7259G
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of TLE 7259G

Packages
P-DSO-8
Transmission Ratemax
10.4 - 20.0 kbit/s
Quiescent Current (max.)
< 10 µA sleep mode
Bus Wake-up Capability
Yes
Additional Features
INH, EN, WK
Wake-up Inputs
Bus wake-up + wake-up pin
4.10
If the TxD signal is dominant for a time t > t
signal to the bus. This is realized to prevent the bus from being permanently blocked by a permanent “Low” signal
on the TxD pin due to an error.
The transmission is released again, after a rising edge at TxD has been detected.
4.11
The TLE7259G has an integrated over temperature sensor, to protect the device against thermal overstress. In
case of an over temperature event, the temperature sensor will disable the output stage. An over temperature
event will not cause any mode change nor will it be signaled by either the RxD pin or the TxD pin. When the
junction temperature falls below the thermal shut down level
communication can start again. A10°C hysteresis avoids toggling during the temperature shut down.
4.12
The TLE7259G can be used for 3.3 V and 5 V micro controllers. The inputs (TxD, EN) take the reference voltage
from the connected micro controller pins. The RxD output must have an external pull-up resistor to the micro
controller supply, to define the output voltage level.
4.13
The TLE7259G has a feature implemented to protect the battery from running out of charge in the case the LIN
bus is shorted to GND.
In this failure case a normal master termination, a 1 kΩ resistor and a diode connected between the Bus pin and
the power supply
resistance between
generator off state, like in a parked car, the TLE7259G has a Bus Short to GND feature implemented. This feature
is only applicable, if the master termination is connected to the INH pin, instead of the
Figure 11
GND. The internal 30 kΩ bus termination is also switched off (see
current.
4.14
The device fulfills the Physical Layer Specification of LIN 1.2, 1.3, 2.0 and 2.1.
The differences between LIN specification 1.2 and 1.3 is mainly the physical layer specification. The reason was
to improve the compatibility between the nodes.
The LIN specification 2.0 is a super set of the 1.3 version. The 2.0 version offers new features. However, it is
possible to use the LIN 1.3 slave node in a 2.0 node cluster, as long as the new features are not used. Vice versa
it is possible to use a LIN 2.0 node in the 1.3 cluster without using the new features.
In terms of the physical layer the LIN 2.1 Specification doesn’t include any changes and is fully compliant to the
LIN Specification 2.0.
LIN 2.1 is the latest version of the LIN specification, released in December 2006.
Data Sheet
and
TxD time out function
Over temperature protection
3.3 V and 5 V Logic Capability
BUS Short to GND Feature
LIN Specifications 1.2, 1.3, 2.0 and 2.1
Figure
V
S
V
, would cause a constant current between
S
12). In Sleep mode the INH pin is switched of and no currently can flow between
and GND of this LIN bus short to GND is lower than 1 kΩ. To avoid this current during a
timeout
the TxD time-out function deactivates the transmission of the LIN
12
T
J
V
Figure 1
<
S
and GND, even in sleep mode. The resulting
T
jSD
, the output stage is re-enabled and data
and
Table
2) to minimize the discharge
Functional Description
V
S
Rev 2.1, 2007-04-27
power supply (see
TLE7259G
V
S
and

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