TLE 8458G Infineon Technologies, TLE 8458G Datasheet - Page 6

• Manufacturer Part Number: TLE 8458G
• Manufacturer: Infineon Technologies

Specifications of TLE 8458G

• Packages: PG-DSO-8
• Transmission Ratemax: 20.0 kbit/s
• Quiescent Current (max.): < 10 µA sleep mode
• Bus Wake-up Capability: Yes
• Additional Features: Vreg, EN, WK
• Wake-up Inputs: Bus wake-up + wake-up pin

4
4.1
Table 2
All voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Voltages
Supply Voltage on
Input Voltage on LIN, WK pin versus
GND
Logic Voltages at EN, TxD, RxD pin
Output Voltage at
Temperatures
Junction Temperature
Storage Temperature
ESD Resistivity
ESD all pins
ESD
ESD Resistivity all pins versus GND
1) Not subject to production test; specified by design.
2)ESD susceptibility “HBM” according to AEC-Q100-002D.
3)ESD susceptibility “CDM” according to ESDA STM 5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
Data Sheet
maximum rating conditions for extended periods may affect device reliability.
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
V
S
, WK, LIN versus GND
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
V
V
CC
S
pin
pin
Symbol
V
V
V
V
T
T
V
V
V
j
stg
S
LIN,G
L,max
CC
ESD,HBM
ESD,HBM
ESD,CDM
1)
Min.
-0.3
-40
-0.3
-0.3
-40
-55
-2
-8
-750
6
Typ.
–
–
–
–
–
–
–
–
–
Values
Max.
40
40
5.5
5.5
150
150
2
8
750
Unit
V
V
V
V
°C
°C
kV
kV
V
General Product Characteristics
Note /
Test Condition
LIN2.1 Param 11
–
–
Static
–
–
HBM
HBM
CDM
2)
2)
3)
Rev. 1.01, 2009-04-28
TLE8458Gx
Number
P_4.1.1
P_4.1.2
P_4.1.3
P_4.1.4
P_4.1.5
P_4.1.6
P_4.1.7
P_4.1.8
P_4.1.9