MC74HC244ANG ON Semiconductor, MC74HC244ANG Datasheet - Page 3

IC BUFF/DVR/RCVR 3ST DUAL 20DIP

MC74HC244ANG

Manufacturer Part Number
MC74HC244ANG
Description
IC BUFF/DVR/RCVR 3ST DUAL 20DIP
Manufacturer
ON Semiconductor
Series
74HCr
Datasheets

Specifications of MC74HC244ANG

Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
2
Number Of Bits Per Element
4
Current - Output High, Low
7.8mA, 7.8mA
Voltage - Supply
2 V ~ 6 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Through Hole
Package / Case
20-DIP (0.300", 7.62mm)
Logic Family
74HC
Number Of Channels Per Chip
Octal
Polarity
Non-Inverting
Supply Voltage (max)
6 V
Supply Voltage (min)
2 V
Maximum Operating Temperature
125 C
Mounting Style
Through Hole
High Level Output Current
- 7.8 mA
Input Bias Current (max)
4 uA
Low Level Output Current
7.8 mA
Maximum Power Dissipation
750 mW
Minimum Operating Temperature
- 55 C
Number Of Lines (input / Output)
3
Output Type
3-State
Propagation Delay Time
96 ns @ 2 V or 50 ns @ 3 V or 18 ns @ 4.5 V or 15 ns @ 6 V
Circuit Type
Low-Power Schottky
Current, Supply
160 μA
Function Type
8-Channels
Logic Function
Buffer/Driver/Receiver
Number Of Circuits
Octal
Package Type
PDIP-20
Special Features
Non-Inverting, Tri-State
Temperature, Operating, Range
-55 to +125 °C
Voltage, Supply
2 to 6 V
Logic Device Type
Buffer/Line Driver, Non Inverting
Supply Voltage Range
2V To 6V
Logic Case Style
DIP
No. Of Pins
20
Operating Temperature Range
-55°C To +125°C
Filter Terminals
DIP
Rohs Compliant
Yes
Family Type
HC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC74HC244ANGOS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
Symbol
in
V
V
V
V
T
t
I
I
I
V
V
P
V
I
T
, V
T
r
I
out
CC
OK
CC
out
stg
CC
, t
OH
IK
in
IH
in
D
A
IL
L
f
out
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
Input Clamp Current (V
Output Clamp Current (V
Power Dissipation in Still Air, Plastic DIP†
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
Package)
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output
Voltage
(Figure 1)
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
SOIC Package†
TSSOP Package†
(Plastic DIP, SOIC, SSOP or TSSOP
V
CC
Parameter
= 6.0 V
V
Parameter
Parameter
CC
CC
I
< 0 or V
O
and GND Pins
= 4.5 V
< 0 or V
V
CC
I
> V
(Voltages Referenced to GND)
O
= 2.0 V
CC
> V
V
|I
V
|I
V
|I
V
out
out
out
out
out
in
in
)
CC
= V
= V
| v 20 mA
| v 20 mA
| v 20 mA
= V
= 0.1 V
)
IH
IH
CC
Test Conditions
http://onsemi.com
|I
|I
|I
– 0.1 V
out
out
out
| v 2.4 mA
| v 6.0 mA
| v 7.8 mA
– 0.5 to V
– 0.5 to V
– 55
Min
2.0
3
0
0
0
0
– 0.5 to + 7.0
– 65 to + 150
Value
± 20
± 35
± 75
± 20
± 20
750
500
450
260
+ 125
1000
CC
CC
Max
V
500
400
6.0
CC
+ 0.5
+ 0.5
Unit
_C
ns
V
V
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
3.0
4.5
6.0
Unit
mW
V
mA
mA
mA
mA
mA
CC
_C
_C
V
V
V
– 55 to
25_C
3.15
1.35
2.48
3.98
5.48
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
out
This device contains protection
Unused inputs must always be
Guaranteed Limit
should be constrained to the
v 85_C
3.15
1.35
2.34
3.84
5.34
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
in
v 125_C
or V
3.15
1.35
1.5
2.1
4.2
0.5
0.9
1.8
1.9
4.4
5.9
2.2
3.7
5.2
out
) v V
in
CC
CC
and
Unit
V
V
V
.
).

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