2MBI800U4G-170 Fuji Electric holdings CO.,Ltd, 2MBI800U4G-170 Datasheet

2MBI800U4G-170

Manufacturer Part Number

2MBI800U4G-170

Description

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI800U4G-170.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

2MBI800U4G-170

Manufacturer:

FUJITSU/富士通

Quantity:

20 000

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2MBI800U4G-170

IGBT MODULE (U series)

1700V / 800A / 2 in one package

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)

Note *3: Biggest internal terminal resistance among arm.

Note *4: This is the value which is deﬁned mounting on the additional cooling ﬁn with thermal compound.

Items

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base (*1) V

Screw torque (*2)

Items

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip (*3)

Items

Thermal resistance (1device)

Contact thermal resistance (1device)

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Electrical characteristics (at Tj= 25°C unless otherwise speciﬁed)

Thermal resistance characteristics

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Symbols

(main terminal) V

(chip)

Cies

ton

toff

(main terminal) V

(chip)

trr

R lead

Symbols

Rth(j-c)

Rth(c-f)

CES

GES

GE (th)

CE (sat)

Symbols

Icp

-Ic

-Ic pulse

Tstg

Mounting

Main Terminals

Sense Terminals

CES

GES

iso

Conditions

IGBT

FWD

with Thermal Compound (*4)

gon

= 800A

= 0V, V

= 20V, I

= 15V

= 10V, V

= 900V, I

= ±15V, Tj = 125°C,

= 0V

= 8.2Ω, R

Conditions

Continuous

1ms

1 device

AC : 1min.

= ±20V

= 1700V

= 800mA

goff

= 0V, f = 1MHz

= 800A,

= 3Ω

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Maximum ratings

min.

5.5

-40 to +125

Characteristics

1700

1200

2400

1600

4800

3400

5.75

±20

800

150

2.5

0.006

2.47

2.87

2.25

2.65

3.10

1.25

1.45

0.25

2.02

2.22

1.80

2.00

0.45

0.27

typ.

6.5

IGBT Modules

0.026

0.045

max.

1600

2.64

2.40

2.39

2.15

1.0

7.5

Units

VAC

N m

°C

Units

°C/W

mΩ

µs

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2MBI800U4G-170 Summary of contents

Page 1

... IGBT MODULE (U series) 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C, chip 1800 VGE=20V 15V 1600 1400 1200 1000 800 600 400 200 0 0.0 1.0 2.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V, chip 1800 Tj=25°C 1600 1400 1200 1000 800 600 400 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=8.2Ω, Rgoff=3Ω, Tj=125°C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 200 400 600 Collector current : Ic [A] Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rgon=8.2Ω, Rgoff=3Ω, Tj=125°C 700 600 500 400 300 200 ...

Page 4

... Forward current vs. Forward on voltage (typ.) chip 1800 Tj=25°C Tj=125°C 1600 1400 1200 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VF [V] Transient thermal resistance (max.) 0.1000 0.0100 0.0010 0.0001 0.001 0.010 Pulse width : Pw [sec] 2.5 3.0 3.5 4.0 FWD IGBT 0.100 1.000 4 4 Reverse recovery characteristics (typ.) Vcc=900V, VGE=± ...

Page 5

... Outline Drawings, mm Equivalent Circuit Schematic sense emitter sense collector main emitter main collector gate main collector main emitter sense collector G2 gate E2 sense emitter IGBT Modules ...

Page 6

... This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest speciﬁcations. ...

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