2SK1626 Renesas Electronics Corporation., 2SK1626 Datasheet
2SK1626
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2SK1626 Summary of contents
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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...
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... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM ADE-208-1302 (Z) 1st. Edition Mar. 2001 1. Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note µs, duty cycle 1% 2. Value 25° Symbol ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1626 I drain current 2SK1627 Gate to source cutoff voltage Static Drain to source 2SK1626 R on state resistance 2SK1627 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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... Power vs. Temperature Derating Case Temperature T Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.01 10 100 4 Maximum Safe Operation Area 0.5 0.2 0 25°C 0. 100 150 Drain to Source Voltage V (° Pulse Width PW (s) 2SK1627 2SK1626 10 30 ...
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... Package Dimensions 10.0 7.0 1.2 0.2 1.4 0.2 2.54 0.5 0.3 0.3 3.2 0.2 4.45 0.3 2.5 0.7 0.1 2.54 0.5 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 2SK1626, 2SK1627 As of January, 2001 2.8 0.2 Unit: mm 2.5 0.2 0.1 TO-220FM — Conforms 1 ...
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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...