APT13GP120BDQ1 Advanced Power Technology, APT13GP120BDQ1 Datasheet
APT13GP120BDQ1
Manufacturer Part Number
APT13GP120BDQ1
Description
Manufacturer
Advanced Power Technology
Datasheet
1.APT13GP120BDQ1.pdf
(6 pages)
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Manufacturer:
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The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 600V, 10A
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 13A, T
= 13A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 500µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
APT13GP120B
APT13GP120BG*
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
1200V
APT13GP120B_S(G)
3
50A @ 960V
-55 to 150
1200
APT13GP120S
APT13GP120SG*
±30
250
300
TYP
G
41
20
50
4.5
3.3
3.0
APT13GP120B_S(G)
C
E
B
G
3000
MAX
±100
500
3.9
6
G
D
C
C
E
3
Amps
Watts
UNIT
Units
Volts
PAK
Volts
°C
µA
nA
E
S
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APT13GP120BDQ1 Summary of contents
Page 1
TYPICAL PERFORMANCE CURVES POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been ...
Page 2
Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...
Page 3
T = -55° 125° 25° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics 250µs ...
Page 4
V = 15V 600V 25°C 125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = ...
Page 5
TYPICAL PERFORMANCE CURVES 3,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...
Page 6
APT15DQ120 90% Gate Voltage t d(off) Collector Voltage 90 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions t Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT13GP120B_S(G) Gate ...