IRF3808S International Rectifier Corp., IRF3808S Datasheet
IRF3808S
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IRF3808S Summary of contents
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... Typ. (PCB Mounted, Steady State)** PD - 94338A IRF3808S IRF3808L ® HEXFET Power MOSFET 75V DSS R = 0.007 DS(on 106AV Pak TO-262 IRF3808S IRF3808L Max. Units 106V 75V A 550 200 W 1.3 W/°C ± 430 5.5 V/ns - 175 °C Max. ...
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... IRF3808S/IRF3808L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000.00 100. 25° 15V 20µs PULSE WIDTH 10.00 1.0 3.0 5.0 7 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRF3808S/IRF3808L 1000 TOP BOTTOM 100 10 ° 100 0.1 Fig 2. Typical Output Characteristics 3 2 175°C 2 ...
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... IRF3808S/IRF3808L 100000 0V, C iss = rss = oss = 10000 Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000. 175°C 100.00 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...
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... Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF3808S/IRF3808L R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 1 ...
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... IRF3808S/IRF3808L Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...
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... Starting Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com IRF3808S/IRF3808L 1.0E-05 1.0E-04 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T every part type ...
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... IRF3808S/IRF3808L * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V GS Fig 17. For N-channel 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane S Low Leakage Inductance Current Transformer - - dv/dt controlled by R ...
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... H E ATSINK & Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" www.irf.com IRF3808S/IRF3808L - B - 4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.05 2) 1.2 2 (.04 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 5 .28 (. ...
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... IRF3808S/IRF3808L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" 10 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com ...
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... IST WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF3808S/IRF3808L (. (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...