IRLL024N International Rectifier Corp., IRLL024N Datasheet

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IRLL024N

Manufacturer Part Number
IRLL024N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
I
I
I
I
P
P
V
E
I
E
dv/dt
T
R
R
D
D
D
DM
AR
J,
D
D
GS
AS
AR
@ T
@ T
@ T
JA
JA
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
@T
T
STG
A
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Parameter
Parameter
GS
GS
GS
@ 10V**
@ 10V*
@ 10V*
G
Typ.
90
50
HEXFET
-55 to + 150
D
S
S O T -2 2 3
Max.
± 16
120
4.4
3.1
2.5
2.1
1.0
8.3
5.0
3.1
0.1
12
IRLL024N
®
R
Max.
DS(on)
Power MOSFET
120
60
V
I
DSS
D
= 3.1A
= 0.065
= 55V
PD - 91895
Units
mW/°C
Units
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
6/15/99

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IRLL024N Summary of contents

Page 1

... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET 10V 10V 10V 150 Typ 91895 IRLL024N ® Power MOSFET V = 55V DSS R = 0.065 DS(on 3. Max. Units 4.4 3 ...

Page 2

... IRLL024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = 25V 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRLL024N VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V ...

Page 4

... IRLL024N 1000 1MHz iss rss 800 oss ds gd 600 C iss 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 ° 0.1 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRLL024N D.U. 5.0V µ d(off ...

Page 6

... IRLL024N 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 300 250 1 5V 200 150 ...

Page 7

... TIO www.irf.com IRLL024N ...

Page 8

... IRLL024N Tape & Reel Information SOT-223 Outline (. (. (. (. ...

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