R1LV0408CSA-7LC Renesas Electronics Corporation., R1LV0408CSA-7LC Datasheet
R1LV0408CSA-7LC
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R1LV0408CSA-7LC Summary of contents
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R1LV0408C-C Series 4M SRAM (512-kword × 8-bit) Description The R1LV0408C 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The ...
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... R1LV0408C-C Series Ordering Information Type No. Access time R1LV0408CSP-5SC 55 ns R1LV0408CSP-7LC 70 ns R1LV0408CSB-5SC 55 ns R1LV0408CSB-7LC 70 ns R1LV0408CSA-5SC 55 ns R1LV0408CSA-7LC 70 ns Rev.2.00, May.25.2004, page Package 525-mil 32-pin plastic SOP (32P2M-A) 400-mil 32-pin plastic TSOP II (32P3Y-H) 8mm × 13.4mm STSOP (32P3K-B) ...
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R1LV0408C-C Series Pin Arrangement 32-pin SOP 32-pin TSOP 1 32 A18 2 31 A16 3 A14 30 4 A12 ...
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R1LV0408C-C Series Block Diagram LSB A11 A9 A8 A15 A18 A10 A13 A17 A16 A14 A12 MSB I/O0 I/O7 CS# Timing Pulse Generator WE# OE# Rev.2.00, May.25.2004, page • • • Memory Matrix Row • × 2,048 ...
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R1LV0408C-C Series Operation Table WE# CS# OE# Mode × × H Not selected Output disable Read Write Write , ×: V Note ...
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R1LV0408C-C Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5SC Standby to +70°C current to +40°C to +25°C −7LC to +70°C to +40°C to +25°C Output low voltage Output high voltage ...
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R1LV0408C-C Series AC Characteristics (Ta = −20 to +70° 2 3.6 V, unless otherwise noted.) CC Test Conditions • Input pulse levels 0 • Input rise and fall time ...
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R1LV0408C-C Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data ...
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R1LV0408C-C Series Timing Waveform Read Timing Waveform (WE Address CS# OE# High impedance Dout Rev.2.00, May.25.2004, page Valid address OLZ t HZ ...
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R1LV0408C-C Series Write Timing Waveform (1) (OE# Clock) Address OE# CS# WE# Dout Din Rev.2.00, May.25.2004, page Valid address OHZ High impedance t DW Valid ...
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R1LV0408C-C Series Write Timing Waveform (2) (OE# Low Fixed) Address CS# WE Dout Din Rev.2.00, May.25.2004, page Valid address WHZ High ...
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R1LV0408C-C Series Low V Data Retention Characteristics CC (Ta = −20 to +70°C) Parameter V for data retention CC −5SC Data to +70°C retention to +40°C current to +25°C −7LC to +70°C to +40°C to +25°C Chip deselect to data ...
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Revision History Rev. Date Contents of Modification Page Description 1.00 Jul. 24, 2003 Initial issue 2.00 May. 25, 2004 1 Features Standby: 2.4 µW (typ) to 1.5 µW (typ) 5 Absolute Maximum Ratings Notes ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...