RL257 EIC Semiconductor Incorporated, RL257 Datasheet

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RL257

Manufacturer Part Number
RL257
Description
Manufacturer
EIC Semiconductor Incorporated
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RL257
Manufacturer:
PHY
Quantity:
30 000
Part Number:
RL257
Manufacturer:
VISHAY/威世
Quantity:
20 000
Rating at 25
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Note :
Page 1 of 2
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
RL251 - RL257
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance
Operation Junction and Storage Temperature Range
Method 208 guaranteed
°
C ambient temperature unless otherwise specified.
RATING
F
= 2.5 A
Ta = 100 °C
Ta = 25 °C
DC
SYMBOL
T
J
V
V
I
R
I
I
V
, T
F(AV)
FSM
R(H)
V
C
RRM
RMS
I
ӨJA
DC
R
F
J
STG
SILICON RECTIFIER DIODES
RL251 RL252 RL253 RL254 RL255 RL256 RL257
50
35
50
Dimensions in inches and ( millimeters )
100
100
70
Certificate TH97/10561QM
0.161 (4.1)
0.154 (3.9)
0.0385 (0.98)
0.040 (1.02)
200
140
200
- 65 to + 175
400
280
400
150
2.5
1.1
D2A
50
35
35
5
600
420
600
1.00 (25.4)
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
Rev. 00 : June 20, 2007
MIN.
MIN.
800
560
800
Certificate TW00/17276EM
1000
1000
700
UNIT
°C/W
μA
μA
pF
°C
V
V
V
A
A
V

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RL257 Summary of contents

Page 1

... Operation Junction and Storage Temperature Range Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V Page Certificate TH97/10561QM SILICON RECTIFIER DIODES 0.161 (4.1) 0.154 (3.9) 0.040 (1.02) 0.0385 (0.98) Dimensions in inches and ( millimeters ) SYMBOL RL251 RL252 RL253 RL254 RL255 RL256 RL257 V 50 100 200 RRM 140 RMS V ...

Page 2

... RATING AND CHARACTERISTIC CURVES (RL251 - RL257) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 2.5 2.0 1.5 1.0 Single phase half wave 60 Hz inductive or 0.5 Resistive load 100 AMBIENT TEMPERATURE, ( FIG.3 - TYPICAL FORWARD CHARACTERISTICS 0.1 Pulse Width = 300 μs 0.01 0.6 0.8 1.0 INSTANTANEOUS FORWARD VOLTAGE, (V) Page FIG.2 - MAXIMUM NON-REPETITIVE PEAK ...

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