TPC8405 TOSHIBA Semiconductor CORPORATION, TPC8405 Datasheet

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TPC8405

Manufacturer Part Number
TPC8405
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Low drain-source ON resistance : P Channel R
High forward transfer admittance : P Channel |Y
Low leakage current : P Channel I
Enhancement-mode
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
: P Channel V
(Note 2a)
(Note 2b)
N Channel V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
GS
= −0.8 to −2.0 V (V
= 1.3 to 2.5 V (V
(Note 2a, 3b, 5)
= 20 kΩ)
N Channel I
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(P Channel U−MOS IV/N Channel U-MOS III)
N Channel R
DSS
DSS
(Ta = 25°C)
Symbol
DS
N Channel |Y
V
P
P
P
P
V
V
E
E
T
I
I
T
DGR
D (1)
D (2)
D (1)
D (2)
DSS
GSS
I
DP
AR
DS
stg
AS
AR
D
ch
= 10 V, I
= −10 μA (V
= 10 μA (V
TPC8405
= −10 V, I
P Channel N Channel
(Note 4a)
−4.5
−4.5
0.75
0.45
13.2
−30
−30
−18
±20
1.5
1.1
DS (ON)
DS (ON)
D
−55 to 150
= 1 mA)
DS
fs
fs
Rating
DS
D
| = 12S (typ.)
150
| = 14S (typ.)
0.1
= −1 mA)
= 30 V)
1
= −30 V)
= 25 mΩ (typ.)
(Note 4b)
= 20 mΩ (typ.)
0.75
0.45
23.4
±20
1.5
1.1
30
30
24
6
6
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2009-09-29
TPC8405
Unit: mm

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TPC8405 Summary of contents

Page 1

... − 1.5 1.5 D (1) P 1.1 1 0.75 0.75 D (1) P 0.45 0.45 D (2) 13.2 23 (Note 4a) (Note 4b) I −4 0 150 ° −55 to 150 °C stg 1 TPC8405 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration 2009-09-29 ...

Page 2

... Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board (b) ( Ω Ω TPC8405 Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) = −4 6.0 A 2009-09-29 ...

Page 3

... − gs1 Q gd (Ta = 25°C) Symbol Test Condition I — DRP −4 DSF TPC8405 Min Typ. Max — — ±10 — — −10 −30 — — −15 — — −0.8 — −2.0 — — ...

Page 4

... ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8405 Min Typ. Max ― ― ±10 ― ― 30 ― 15 ― 1.3 ― 2.5 ― 25 ― ― 1240 ― 180 ― ...

Page 5

... GS 100 −10 −100 −0.1 (A) 5 TPC8405 I – −4 −3.2 Common source −2 25°C Pulse test −2.6 −2.4 −2.3 −2.2 −2 −2 V −1 −2 −3 −4 Drain−source voltage V ...

Page 6

... C rss −0.4 0 −80 −10 −100 (V) DS −40 (Note 2a) (Note 3b) −30 (Note 2b) (Note 3a) (Note 3b) −20 −10 0 150 200 0 C) ° 6 TPC8405 I – Common source Ta = 25°C Pulse test −5 −3 −10 − 0.2 0.4 0.6 0.8 1.0 Drain−source voltage V ( – Common source − ...

Page 7

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0.1 1 Pulse width t ( ms* −10 −100 ( TPC8405 (4) (3) (2) (1) 10 100 1000 2009-09-29 ...

Page 8

... Drain current I Common source Ta = 25°C 3.2 Pulse test 3.1 3 2.9 2.8 2 2.6 V 0.6 0.8 1 1000 Ta = 100°C 100 10 100 ( TPC8405 I – 3.6 Common source Ta = 25°C 6 3.8 Pulse test 3 3.3 12 3 Drain−source voltage V (V) ...

Page 9

... DS 40 (Note 2a) (Note 3b) 30 (Note 2b) (Note 3a) (Note 3b 150 200 0 C) ° 9 TPC8405 I – Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain−source voltage V ( – ...

Page 10

... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0.1 1 Pulse width t ( ms* 10 100 ( TPC8405 (4) (3) (2) (1) 10 100 1000 2009-09-29 ...

Page 11

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPC8405 2009-09-29 ...

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