W27E512P Winbond, W27E512P Datasheet

no-image

W27E512P

Manufacturer Part Number
W27E512P
Description
Manufacturer
Winbond
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W27E512P
Manufacturer:
Winbond
Quantity:
1 800
Part Number:
W27E512P
Manufacturer:
WINBOND
Quantity:
5 510
Part Number:
W27E512P
Manufacturer:
MITSUBISHI
Quantity:
5 510
Part Number:
W27E512P-12
Manufacturer:
WINBOND
Quantity:
5 530
Part Number:
W27E512P-12
Manufacturer:
WINBOND
Quantity:
5 120
GENERAL DESCRIPTION
The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512
provides an electrical chip erase function.
FEATURES
PIN CONFIGURATIONS
High speed access time:
45/55/70/90/120/150 nS (max.)
Read operating current: 30 mA (max.)
Erase/Programming operating current
30 mA (max.)
Standby current: 1 mA (max.)
Single 5V power supply
OE/Vpp
V
Q0
A13
A14
A15
A12
A6
A5
A4
A3
A2
A1
A0
NC
A11
A9
CC
A6
A5
A4
A3
A8
A7
GND
A15
A12
Q0
Q2
64K × 8 ELECTRICALLY ERASABLE EPROM
Q1
A7
A6
A5
A4
A3
A2
A1
A0
11
5
6
7
8
9
10
12
13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1
4
A
7
Q
1
4 3 2 1 3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A
1
2
1
5
Q
2
1
6
A
1
5
G
N
D
28-pin
32-pin
PLCC
DIP
28-pin
TSOP
N
C
1
7
N
C
V
C
C
1
8
2
Q
3
A
1
4
1
9
Q
4
3
1
19
18
17
15
28
27
26
25
24
23
22
21
20
16
A
1
3
2
0
Q
5
3
0 29
22
28
27
26
25
24
23
21
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A13
A8
A9
A11
OE/Vpp
A10
CE
Q7
Q6
Q5
Q4
Q3
V
CC
A8
A9
A11
NC
OE/Vpp
A10
CE
Q7
Q6
A10
CE
GND
Q2
Q1
Q0
A0
A1
A2
Q7
Q6
Q5
Q4
Q3
- 1 -
• Available p
BLOCK DIAGRAM
PIN DESCRIPTION
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
SOP, TSOP and 32-pin PLCC
SYMBOL
A0−A15
OE /V
Q0−Q7
GND
V
CE
NC
CC
OE/V
PP
GND
Publication Release Date: November 1999
A15
CE
V
A0
.
.
PP
CC
ackages: 28-pin 600 mil DIP, 330 mil
DECODER
CONTROL
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable, Program/Erase
Supply Voltage
Power Supply
Ground
No Connection
DESCRIPTION
OUTPUT
BUFFER
ARRAY
CORE
W27E512
Revision A8
Q0
Q7
.
.

Related parts for W27E512P

W27E512P Summary of contents

Page 1

ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512 ...

Page 2

FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E512 has two control functions, both of which produce data at the outputs for power control and chip select. OE/V to the output pins. When addresses are stable, the address ...

Page 3

Standby Mode The standby mode significantly reduces V mode, all outputs are in a high impedance state, independent Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E512 provides two control inputs for ...

Page 4

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all Pins with Respect to Ground Except OE/V A9 and V Pins PP, CC Voltage on OE/V Pin with Respect to Ground PP Voltage on ...

Page 5

CAPACITANCE ( 25° MHz PARAMETER SYMBOL Input Capacitance Output Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level ...

Page 6

READ OPERATION DC CHARACTERISTICS = 5.0V ±10 70° PARAMETER SYM. Input Load Current I LI Output Leakage I LO Current Standby V Current (TTL input) Standby V Current I ...

Page 7

DC PROGRAMMING CHARACTERISTICS = 5.0V ±10 25° C ±5° PARAMETER Input Load Current V Program Current CC V Program Current PP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage ...

Page 8

TIMING WAVEFORMS AC Read Waveform V IH Address OE/Vpp V IL High Z Outputs Erase Waveform Read Read Company Device SID SID A9=12.0V Others Address A0=V IL A0=V ...

Page 9

Timing Waveforms, continued Programming Waveform V IH Address Stable Address Data In Stable Data 12.0V OE/Vpp OES PRT T PWP ...

Page 10

SMART PROGRAMMING ALGORITHM 1 No Increment Address Increment Address No Pass Last Address? Yes Start Address = First Location Vcc = 5.0V OE/Vpp = 12V µ Program One 100 S Pulse Last Address? Yes Address = First Location X = ...

Page 11

SMART PROGRAMMING ALGORITHM 2 Fail Increment Address Start Address = First Location Vcc = 5. µ Program One 100 S Pulse OE/V = 12V PP Increment X Yes X = 25? No Verify One Byte Verify One ...

Page 12

SMART ERASE ALGORITHM Chip Erase 100 mS Pulse Address = First Location No Increment Address Start Vcc = 5V OE/Vpp = 14V A9 = 14V Increment X Vcc = 3.75V OE/Vpp = V ...

Page 13

... W27E512P-55 55 W27E512P-70 70 W27E512P-90 90 W27E512P-12 120 W27E512P-15 150 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

Page 14

PACKAGE DIMENSIONS 28-pin P-DIP 28-pin SO Wide Body Seating Plane Symbol 15 Notes Dimensions ...

Page 15

Package Dimensions, continued 28-pin Standard Type One TSOP θ 32-pin PLCC θ Seating Plane ...

Page 16

... Modify A9 and V PP from 13.75V (min) to 13.25V (min) 6 Modify V description CC Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp. Winbond Memory Lab. Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Winbond Microelectronics Corp. Kowloon, Hong Kong Winbond Systems Lab. TEL: 852-27513100 2727 N ...

Related keywords