FDD6670 Fairchild Semiconductor, FDD6670 Datasheet
FDD6670
Manufacturer Part Number
FDD6670
Description
Manufacturer
Fairchild Semiconductor
Specifications of FDD6670
Case
TO-252
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FDD6670A
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FAICHILD
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FAIRCHILD
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FDD6670A
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FDD6670A
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FairchildSem
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FDD6670A
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20 000
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Part Number:
FDD6670AL
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FAIRCHILD
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30 000
Part Number:
FDD6670AL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
2000 Fairchild Semiconductor Corporation
FDD6670A
N-Channel, Logic Level, PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
•
•
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
DC/DC converter
Motor drives
, T
JC
JA
Device Marking
stg
FDD6670A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
G
S
FDD6670A
Device
TO-252
Parameter
-Continuous
-Pulsed
T
T
T
D
T
T
A
A
A
C
C
=25
= 25
= 25
= 25
= 25
o
C unless otherwise noted
Reel Size
o
o
o
o
C
C
C
C
13’’
(Note 1a)
(Note 1b)
(Note 1b)
(Note 1)
(Note 1)
(Note 1a)
(Note 1a)
(Note 1)
Features
•
•
•
•
66 A, 30 V. R
Low gate charge (35nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
R
G
DS(on)
DS(on)
Tape width
16mm
-55 to +150
= 0.008
Ratings
= 0.010
100
3.2
1.3
1.8
30
66
15
70
40
96
20
D
S
@ V
@ V
GS
GS
= 10 V
February 2000
= 4.5 V.
Quantity
2500
FDD6670A, Rev. C
Units
C/W
C/W
C/W
W
V
V
A
C
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