HY29F080T-90 Hynix Semiconductor, HY29F080T-90 Datasheet

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HY29F080T-90

Manufacturer Part Number

HY29F080T-90

Description

Manufacturer

Hynix Semiconductor

Datasheet

1.HY29F080T-90.pdf (38 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HY29F080T-90

Manufacturer:

HY

Quantity:

6 900

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HY29F080T-90

Manufacturer:

HY

Quantity:

6 900

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HY29F080T-90I

Manufacturer:

HY

Quantity:

5 530

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Download datasheet (362Kb)

KEY FEATURES

n 5 Volt Read, Program, and Erase

n High Performance

n Low Power Consumption

n Compatible with JEDEC Standards

n Sector Erase Architecture

n Erase Suspend/Resume

GENERAL DESCRIPTION

The HY29F080 is an 8 Megabit, 5 volt-only CMOS

Flash memory organized as 1,048,576 (1M) bytes

of eight-bits each. The device is offered in indus-

try-standard 44-pin PSOP and 40-pin TSOP pack-

ages.

The HY29F080 can be programmed and erased

in-system with a single 5-volt V

nally generated and regulated voltages are pro-

vided for program and erase operations, so that

the device does not require a high voltage power

supply to perform those functions. The device can

also be programmed in standard EPROM pro-

grammers. Access times as fast as 70ns over the

full operating voltage range of 5.0 volts ± 10% are

offered for timing compatibility with the zero wait

state requirements of high speed microprocessors.

Revision 6.1, May 2001

– Minimizes system-level power

– Access times as fast as 70 ns

– 15 mA typical active read current

– 30 mA typical program/erase current

– 5 µA maximum CMOS standby current

– Package, pinout and command-set

– Provides superior inadvertent write

– Sixteen equal size sectors of 64K bytes

– A command can erase any combination of

– Supports full chip erase

– Temporarily suspends a sector erase

requirements

compatible with the single-supply Flash

device standard

protection

each

sectors

operation to allow data to be read from, or

programmed into, any sector not being

erased

CC

supply. Inter-

8 Megabit (1M x 8), 5 Volt-only, Flash Memory

n Sector Group Protection

n Temporary Sector Unprotect

n Internal Erase Algorithm

n Internal Programming Algorithm

n Fast Program and Erase Times

n Data# Polling and Toggle Status Bits

n Ready/Busy# Pin

n Minimum 100,000 Program/Erase Cycles

n Space Efficient Packaging

LOGIC DIAGRAM

– Sectors may be locked in groups of two to

– Allows changes in locked sectors

– Automatically erases a sector, any

– Automatically programs and verifies data

– Byte programming time: 7 µs typical

– Sector erase time: 1.0 sec typical

– Chip erase time: 16 sec typical

– Provide software confirmation of

– Provides hardware confirmation of

– Available in industry-standard 40-pin

20

prevent program or erase operations

within that sector group

(requires high voltage on RESET# pin)

combination of sectors, or the entire chip

at a specified address

completion of program or erase

operations

completion of program and erase

operations

TSOP and 44-pin PSOP packages

A[19:0]

R E S E T #

C E #

O E #

W E #

RY/BY#

DQ[7:0]

HY29F080

8

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