HY29F800ABT-70 Hynix Semiconductor, HY29F800ABT-70 Datasheet

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HY29F800ABT-70

Manufacturer Part Number

HY29F800ABT-70

Description

Manufacturer

Hynix Semiconductor

Datasheets

1.HY29F800ABT-90I.pdf (40 pages)

2.HY29F800ABT-70.pdf (40 pages)

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KEY FEATURES

n 5 Volt Read, Program, and Erase

n High Performance

n Low Power Consumption

n Compatible with JEDEC Standards

n Sector Erase Architecture

n Erase Suspend/Resume

GENERAL DESCRIPTION

The HY29F800A is an 8 Megabit, 5 volt only CMOS

Flash memory organized as 1,048,576 (1M) bytes

or 524,288 (512K) words. The device is offered in

industry-standard 44-pin PSOP and 48-pin TSOP

packages.

The HY29F800A can be programmed and erased

in-system with a single 5-volt V

generated and regulated voltages are provided for

program and erase operations, so that the device

does not require a high voltage power supply to

perform those functions. The device can also be

programmed in standard EPROM programmers.

Access times as fast as 55 ns over the full operat-

ing voltage range of 5.0 volts ± 10% are offered for

timing compatibility with the zero wait state require-

ments of high speed microprocessors. A 50 ns

Preliminary

Revision 1.1, February 2002

– Minimizes system-level power requirements

– Access times as fast as 50 ns

– 20 mA typical active read current in byte

– 35 mA typical program/erase current

– 5 µA maximum CMOS standby current

– Package, pinout and command-set

– Provides superior inadvertent write

– Boot sector architecture with top and

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte

– One 8 Kword, two 4 Kword, one 16 Kword

– A command can erase any combination of

– Supports full chip erase

– Temporarily suspends a sector erase

mode, 28 mA typical in word mode

compatible with the single-supply Flash

device standard

protection

bottom boot block options available

and fifteen 64 Kbyte sectors in byte mode

and fifteen 32 Kword sectors in word mode

sectors

operation to allow data to be read from, or

programmed into, any sector not being

erased

CC

supply. Internally

8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory

n Sector Protection

n Temporary Sector Unprotect

n Internal Erase Algorithm

n Internal Programming Algorithm

n Fast Program and Erase Times

n Data# Polling and Toggle Status Bits

n Ready/Busy# Output (RY/BY#)

n Minimum 100,000 Program/Erase Cycles

n Space Efficient Packaging

LOGIC DIAGRAM

– Any combination of sectors may be locked

– Allows changes in locked sectors

– Automatically erases a sector, any

– Automatically programs and verifies data

– Byte programming time: 7 µs typical

– Sector erase time: 1.0 sec typical

– Chip erase time: 19 sec typical

– Provide software confirmation of

– Provides hardware confirmation of

– Available in industry-standard 44-pin

19

to prevent program or erase operations

within those sectors

(requires high voltage on RESET# pin)

combination of sectors, or the entire chip

at a specified address

completion of program or erase

operations

completion of program and erase

operations

PSOP and 48-pin TSOP and reverse

TSOP packages

A[18:0]

C E #

O E #

W E #

R E S E T #

B Y T E #

DQ[15]/A-1

DQ[14:8]

RY/BY#

DQ[7:0]

HY29F800A

8

7

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