MSDB62D-68KX3 Kingmax Semiconductor, MSDB62D-68KX3 Datasheet

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MSDB62D-68KX3

Manufacturer Part Number
MSDB62D-68KX3
Description
DRAM Module, 256 Mb PC-2100 DDR SO-DIMM
Manufacturer
Kingmax Semiconductor
Datasheet
MSDB62D-68KX3 PC-2100 CL2.5 200pin DDR SO-DIMM
32M×64 DDR SO-DIMM based on 16M×8 DDR SDRAMs with SPD
DESCRIPTION
high density memory module.
Rate Synchronous DRAMs in TinyBGA package and a 2K EEPROM in 8-Pin TSSOP
package on a 200-Pin glass-epoxy substrate. One 0.1µF decoupling capacitors are mounted
on the printed circuit board in parallel for each DDR SDRAM.
for mounting into 200-Pin edge connector sockets.
transactions are possible on both edges of every clock cycle. Range of operating frequencies,
programmable latencies and burst lengths allows the same device to be useful for a variety of
high bandwidth, high performance memory system applications.
FEATURES
• Performance range - 133MHz (Max Freq. ) ( CL=2.5 )
• Double-data-rate architecture; two data transfers per clock cycle
• Bi-directional data strobe (DQS)
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transition with CK transition
• Auto & self refresh capability (4096 Cycles / 64ms)
• Single 2.5V ±0.2V power supply
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (Sequential & Interleave)
• Edge aligned data output, center aligned data input
• Serial presence detect with EEPROM
• PCB : Height (1,250 mil), double sided component
Kingmax - Memory Module
The MSDB62D-68KX3 is 32M bit × 64 Double Data Rate Synchronous Dynamic RAM
The MSDB62D-68KX3 consists of sixteen CMOS 16M × 8 bit with 4 banks Double Data
The MSDB62D-68KX3 is a Small Outline Dual In- line Memory Module and is intended
Synchronous design allows precise cycle control with the use of system clock. Data I/O
256MB PC-2100 DDR SO-DIMM
1
MSDB62D-68KX3
April 2002 Rev: 1.0

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MSDB62D-68KX3 Summary of contents

Page 1

... The MSDB62D-68KX3 is 32M bit × 64 Double Data Rate Synchronous Dynamic RAM high density memory module. The MSDB62D-68KX3 consists of sixteen CMOS 16M × 8 bit with 4 banks Double Data Rate Synchronous DRAMs in TinyBGA package and a 2K EEPROM in 8-Pin TSSOP package on a 200-Pin glass-epoxy substrate. One 0.1µF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM ...

Page 2

... VDD 192 VDD SDA 194 SA0 SCL 196 SA1 SA2 VDDID 200 DU 2 MSDB62D-68KX3 PIN NAME Pin Name Function A0 ~ A11 Address input (Multiplexed) BA0 ~ BA1 Select bank DQ0 ~ DQ63 Data input/output DQS0 ~ DQS7 Data Strobe input/output CK0 , CK1 Clock input /CK0 , /CK1 ...

Page 3

... DQ58 DQ3 DQ59 DQ4 DQ60 DQ5 DQ61 DQ6 DQ62 DQ7 DQ63 A0 ~ A11,BA0,BA1 /RAS, /CAS, /WE To SDRAM U1 ~ U16 U1,U3,U5,U7, To SDRAM U10,U12,U14,U16 U2,U4,U6,U8, To SDRAM U9,U11,U13,U15 3 MSDB62D-68KX3 /CLK /CS CLK /CLK /CS 22W x 10 DQS DQS DM DM DQ0 DQ0 DQ1 DQ1 U5 DQ2 DQ2 DQ3 DQ3 DQ4 DQ4 DQ5 ...

Page 4

... TT , and must track variations in the DC level of REF envelop that has been bandwidth limited to 200MHz. REF pin 0V V 1.35V, All other pins not under test = REF IN 4 MSDB62D-68KX3 Value Unit -1.0 ~ 3.6 -0.5 ~ 3.6 -55 ~ +125 16 Min Max Unit 2.3 2.7 V 0.51×V ...

Page 5

... Active READ or WRITE commands Kingmax - Memory Module 256MB PC-2100 DDR SO-DIMM mA; OUT = V for DQ, DQS and DM IN REF = 0 mA OUT tRC = tRC(Min) tRC = 15.625µs 0.2V 5 MSDB62D-68KX3 = +2.5V ±0.2V DD Symbol Max Unit Note I 1080 mA DD0 I 1520 mA DD1 I 32 ...

Page 6

... IL(AC) V 0.7 ID(DC) V 0.5×V IX(DC) DD envelop that has been bandwidth limited to 200MHz. REF of the transmitting device and must track +2.5V ±0. Value 0.5×V V +0. REF See Load Circuit 6 MSDB62D-68KX3 Max Unit Note - -0. REF V +0 -0.2 0.5×V +0 Unit ...

Page 7

... MSDB62D-68KX3 Max Unit Note - 120K tCK tCK tCK 0.55 tCK 0.55 tCK +0.75 ns +0.75 ns +0.5 ns 1.1 tCK 0.6 tCK 1.25 tCK ...

Page 8

... Input Setup/Hold Slew Rate (V/ns) 0.5 0.4 0.3 This derating table is used to increase tIS /tIH in the case where the input slew rate is below 0.5V/ns. Input setup/hold slew rate based on the lesser of AC-AC slew rate and DC-DC slew rate. Kingmax - Memory Module MSDB62D-68KX3 256MB PC-2100 DDR SO-DIMM Symbol Min Max tMRD 15 tDS ...

Page 9

... Kingmax - Memory Module 256MB PC-2100 DDR SO-DIMM tIS (ps) 0 +75 +150 tIS (ps) +50 tIS (ps) 0 +50 +100 = 1.25V 100mV) REF Symbol C IN1 C IN2 C IN3 C IN4 C I/O 9 MSDB62D-68KX3 Tih (ps) 0 +75 +150 tIH (ps) +50 tIH (ps) 0 +50 +100 Min Max Unit ...

Page 10

... Program keys. (@EMRS/MRS "Low" at read, write, row active and precharge, bank B is selected "High" at read, write, row active and precharge, bank C is selected. 1 and BA are ignored and all banks are selected MSDB62D-68KX3 code L L ...

Page 11

... PACKAGE DIMENSIONS 31.75 20.0 1 6.0 2.15 11.4 15.35 17.75 18.05 2. 0.5 Tolerance : ±0.15 unless otherwise specified The used device is 16Mx8 DDR SDRAM TinyBGA Kingmax - Memory Module 67.6 63 4.0 ±0.1 2.55 Min. 1.0 ±0.1 0.25 ±0.12 0.45 ±0.03 Detail A 11 MSDB62D-68KX3 Units : Millimeter B 9.75 4.0 ±0.1 R 2.0 Ø 1.8 199 0.6 B' 47.4 200 3.8 Max. 4.0 Min. 4.0 Min. 1.0 ±0.1 Section B-B' April 2002 Rev: 1.0 ...

Page 12

... Data signal input setup time 34 Data signal input hold time 35 36~61 Superset information (maybe used in future) SPD data revision code 62 Checksum for bytes Kingmax - Memory Module MSDB62D-68KX3 256MB PC-2100 DDR SO-DIMM Function Supported 128 bytes 256 bytes (2K-bit) SDRAM DDR banks 64 bits - SSTL 2 ...

Page 13

... Assemble serial # -BCD (reserve) 99~125 Manufacturer specific data (may be used in future) 126 Intel specification for frequency 127 Intel specification details for 100MHz support 128+ Unused storage locations Kingmax - Memory Module MSDB62D-68KX3 256MB PC-2100 DDR SO-DIMM kingmax kingmax kingmax kingmax - Hsin Chu (A) ...

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