APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet - Page 8

• Manufacturer Part Number: APT100GT60JRDL
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80
• Manufacturer: Microsemi Corporation

Typical Performance Curves
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
FIGURE 6, Dynamic Parameters vs Junction Temperature
14000
12000
10000
1000
8000
6000
4000
2000
1. 2
0.5
0.4
900
800
700
600
500
400
300
200
100
250
225
200
175
150
125
100
1.0
0.3
0.2
FIGURE 8, Junction Capacitance vs. Reverse Voltage
75
50
25
0
0
0
FIGURE 2, Forward Current vs. Forward Voltage
0
1
0
0
0
-di
V
F
T
I
V
RRM
F
/dt, CURRENT RATE OF CHANGE (A/μs)
J
Q
T
R
, ANODE-TO-CATHODE VOLTAGE (V)
= 125°C
J
= 400V
t
RR
, JUNCTION TEMPERATURE (°C)
RR
25
200
0.5
V
R
, REVERSE VOLTAGE (V)
T
T
T
50
J
= 55°C
J
J
= 125°C
= 25°C
400
10
1
75
600
1.5
100
200A
100
T
800
125
J
2
= 150°C
100A
50A
1000
150
2.5
400
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
1000
400
350
300
250
200
150
100
800
600
400
200
50
70
60
50
40
30
20
10
0
0
0
0
25
-di
0
-di
T
V
F
J
F
100A
/dt, CURRENT RATE OF CHANGE (A/μs)
R
Duty cycle = 0.5
/dt, CURRENT RATE OF CHANGE (A/μs)
= 125°C
50A
= 400V
200A
T
J
= 45°C
200
200
50
Case Temperature (°C)
400
400
75
50A
100A
100
600
600
200A
800
125
800
T
V
APT100GT60JRDL
J
R
= 125°C
= 400V
150
1000
1000