M25P32-VMW6TP Numonyx, B.V., M25P32-VMW6TP Datasheet - Page 43
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M25P32-VMW6TP
Manufacturer Part Number
M25P32-VMW6TP
Description
32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface
Manufacturer
Numonyx, B.V.
Datasheet
1.M25P32-VMW6TP.pdf
(53 pages)
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Table 14.
1. Details of how to find the Technology Process in the marking are given in AN1995, see also
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7. V
8. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
9. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 23. Serial input timing
Symbol
t
PP
known.
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
t
t
CH
t
SE
BE
PPH
W
(8)
+ t
S
C
D
Q
should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
CL
Applies only to products made with T9HX technology, identified with Process digit “4”
must be greater than or equal to 1/ f
Alt.
tCHSL
AC characteristics (
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Program cycle time (V
Sector Erase cycle time
Sector Erase cycle time (V
Bulk Erase cycle time
Bulk Erase cycle time (V
tDVCH
A
= 25 °C.
High Impedance
Test conditions specified in
MSB IN
tSLCH
T9HX technology
Parameter
PP
tCHDX
C
PP
= V
PP
= V
= V
PPH
PPH
PPH
)
)
) (continued)
) (256 bytes)
Table 10
tCLCH
tCHSH
and
LSB IN
Min.
Table 11
int(n/8) × 0.02
Section 12: Part
tCHCL
Typ.
tSHSL
DC and AC parameters
0.64
0.64
1.3
0.6
0.6
23
13
tSHCH
(2)
(9)
AI01447C
numbering.
Max.
(1)
15
80
5
3
Unit
43/53
ms
ms
s
s