STT130GK08 Sirectifier Semiconductors, STT130GK08 Datasheet - Page 3

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STT130GK08

Manufacturer Part Number
STT130GK08
Description
Thyristor-Thyristor Modules
Manufacturer
Sirectifier Semiconductors
Datasheet
Fig. 1 Surge overload current
Fig. 3 Power dissipation versus on-state current and ambient temperature
I
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
TSM
4000
3000
2000
1000
A
0.001
0
I
and ambient temperature
TSM
(per thyristor or diode)
, I
FSM
: Crest value, t: duration
0.01
0.1
50 Hz
80 % V
T
T
VJ
VJ
= 45°C
= 125°C
3 x STT130
s
Thyristor-Thyristor Modules
RRM
t
1
Fig. 2 i
i
2
t
A
10
10
10
2
s
6
5
4
STT130
1
2
t versus time (1-10 ms)
T
VJ
= 45°C
1
T
VJ
= 125°C
t
ms
0
Fig. 2a Maximum forward current
Fig. 4 Gate trigger characteristics
Fig. 6 Gate trigger delay time
at case temperature

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