STT165 Sirectifier Semiconductors, STT165 Datasheet - Page 2

• Manufacturer Part Number: STT165
• Description: Thyristor-Thyristor Modules
• Manufacturer: Sirectifier Semiconductors

FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
I
Symbol
RRM
V
R
R
V
V
V
I
T
I
I
Q
t
d
d
r
GD
I
t
RM
thJC
thJK
GT
I
, I
gd
a
, V
GD
TO
GT
H
L
q
T
S
A
S
DRM
F
T
I
For power-loss calculations only (T
V
V
T
T
T
I
T
T
I
T
V
T
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
G
T
G
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
, I
D
D
R
=0.45A; di
=0.5A; di
=6V;
=6V;
=100V; dv/dt=20V/us; V
=T
=T
=T
=25
=25
=25
=T
=T
F
=300A; T
VJM
VJM
VJM
VJM
VJM
o
o
o
C; t
C; V
C; V
; V
;
;
; I
; I
G
T
T
p
R
=160A; t
, I
G
/dt=0.5A/us
=30us; V
D
D
=V
/dt=0.45A/us
=6V; R
=1/2V
VJ
F
=300A; -di/dt=50A/us
=25
RRM
o
; V
DRM
C
GK
p
D
=200us; -di/dt=10A/us
Test Conditions
D
T
T
T
T
V
V
=6V
=
=V
VJ
VJ
VJ
VJ
D
D
Thyristor-Thyristor Modules
=2/3V
=2/3V
=-40
=-40
=25
=25
DRM
D
=2/3V
o
o
o
o
C
C
C
C
DRM
DRM
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
* Lighting control
* Contactless switches
industrial furnaces and chemical
processes
DRM
VJ
STT165
=T
VJM
)
typ.
Characteristic Values
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
* Reduced protection circuits
cycling
0.0775
0.1125
0.155
0.225
1.36
0.25
12.7
150
200
200
150
150
550
235
0.8
1.6
2.6
9.6
40
10
50
2
2
m/s
Unit
K/W
K/W
mm
mm
mA
m
mA
mA
mA
mA
uC
us
us
V
V
V
V
A
2