STP15NM65N STMicroelectronics, STP15NM65N Datasheet - Page 4

• Manufacturer Part Number: STP15NM65N
• Description: N-channel 650V - 0.25 Ohm - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1. Characteristics value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
V
V
V
V
V
V
V
(see Figure 19)
I
Vdd=520 V, Id=15.5 A,
Vgs=10 V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DS
DD
DS
DS
GS
DS
GS
= 1 mA, V
=15 V
= 50 V, f = 1 MHz,
= 0
= 0 V,
= 0V to 520 V
= 520 V, I
= 10 V,
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
,
, I
I
D
GS
D
D
=7.75 A
D
= 250 µA
= 7.75 A
= 0
= 15.5 A,
Min.
Min.
650
2
1900
Typ.
Typ.
0.25
110
230
15
10
55
30
30
9
3
oss
Max.
±100
Max.
0.27
when V
100
1
4
DS
Unit
V/ns
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S