STG8206 SamHop Microelectronics Corp., STG8206 Datasheet - Page 3

• Manufacturer Part Number: STG8206
• Description: Dual N-Channel E nhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

S T G 8206
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Parameter
2250
1800
1350
900
450
16
12
20
8
4
0
0
F igure 1. Output C haracteris tics
0
0
V
V
V
DS
DS
F igure 3. C apacitance
2
G S
2
V
, Drain-to S ource Voltage (V )
, Drain-to-S ource Voltage (V )
=10,9,8,7,6,5,4,3V
C rs s
G S
=2V
4
4
6
6
8
8
S ymbol
10
V
10
C os s
S D
C is s
A
12
12
=25 C unless otherwise noted)
b
V
GS
3
Condition
F igure 4. On-R es is tance Variation with
= 0V, Is =2A
2.2
1.8
1.4
1.0
0.6
0.2
25
20
15
10
0
0.0
5
0
-50
F igure 2. Trans fer C haracteris tics
V
G S
I
D
-25
=4.5V
=5A
V
0.4
G S
Temperature
, G ate-to-S ource Voltage (V )
0
0.8
25
1.2
Min Typ Max Unit
50
-55 C
1.6
75
25 C
0.8
T j=125 C
100
2.0
T j( C )
C
125
1.2
2.4
V