IXFA 3N120 IXYS Corporation, IXFA 3N120 Datasheet - Page 2

• Manufacturer Part Number: IXFA 3N120
• Description: TRANS MOSFET N-CH 1200V 3A 3TO-263
• Manufacturer: IXYS Corporation

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
RM
d(on)
d(off)
S
SM
one or moreof the following U.S. patents:
r
f
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
DS
GS
= I
I
F
S
= 0 V
= 20 V; I
V
V
R
V
(TO-220)
, V
= I
GS
GS
GS
G
S
= 4.7 Ω (External),
GS
, -di/dt = 100 A/µs, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
4,835,592
4,850,072
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
4,931,844
5,017,508
5,034,796
(T
(T
R
DSS
DSS
= 100 V
J
J
= 25°C, unless otherwise specified)
, I
, I
= 25°C, unless otherwise specified)
D
D
5,049,961
5,063,307
5,187,117
JM
= 0.5 • I
= 0.5 • I
D25
D25
5,237,481
5,381,025
5,486,715
min.
min.
1.5
Characteristic Values
Characteristic Values
1050
0.25
typ.
typ.
100
0.4
1.2
2.5
6,162,665
6,259,123 B1
6,306,728 B1
25
17
15
32
18
39
22
9
0.62
max.
max.
300
1.5
12
3
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-263 (IXFA) Outline
TO-220 (IXFP) Outline
3 - Source
14.61
6,727,585
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
IXFA 3N120
IXFP 3N120
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
4 - Drain
Bottom Side
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
1. Gate
2. Drain
3. Source
4. Drain
Inches
0
Bottom Side
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029