IXFK55N50F IXYS Corporation, IXFK55N50F Datasheet
IXFK55N50F
Manufacturer Part Number
IXFK55N50F
Description
500V HiPerRF power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFK55N50F.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK55N50F
Manufacturer:
IR
Quantity:
9 000
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q , Low Intrinsic R
High dV/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DSS
DS(on)
Test Conditions
V
Test Conditions
V
S
J
J
C
C
C
C
C
J
C
GS
DS
DS
GS
GS
GS
= V
= 0 V, I
DM
TM
GS
DSS
, I
D
D
= 8mA
= 1mA
D
G
DS
D25
GS
DD
J
J
J
DSS
JM
Advance Technical Information
500
min.
3.0
IXFK 55N50F
IXFX 55N50F
Characteristic Values
Maximum Ratings
typ.
max.
5.5 V
V
PLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
TO-264 AA (IXFK)
G = Gate
S = Source
V
R
I
RF capable Mosfets
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
t
D25
rr
DSS
DS(on)
250 ns
G
TM
(IXFX)
D
TM
= 500
=
=
55
85 m
D = Drain
TAB = Drain
98855 (8/01)
V
A
(TAB)
(TAB)
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IXFK55N50F Summary of contents
Page 1
... D25 DS(on) t 250 PLUS 247 (IXFX TO-264 AA (IXFK Gate D = Drain S = Source TAB = Drain Features l RF capable Mosfets l l Double metal process for low gate resistance l l Low package inductance - easy to drive and to protect l Applications 5.5 V Advantages l ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK Source-Drain ...