IXFK55N50F IXYS Corporation, IXFK55N50F Datasheet
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IXFK55N50F
Manufacturer Part Number
IXFK55N50F
Description
500V HiPerRF power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFK55N50F.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK55N50F
Manufacturer:
IR
Quantity:
9 000
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q , Low Intrinsic R
High dV/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
GS(th)
d
DSS
DS(on)
Test Conditions
V
Test Conditions
V
S
J
J
C
C
C
C
C
J
C
GS
DS
DS
GS
GS
GS
= V
= 0 V, I
DM
TM
GS
DSS
, I
D
D
= 8mA
= 1mA
D
G
DS
D25
GS
DD
J
J
J
DSS
JM
Advance Technical Information
500
min.
3.0
IXFK 55N50F
IXFX 55N50F
Characteristic Values
Maximum Ratings
typ.
max.
5.5 V
V
PLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
TO-264 AA (IXFK)
G = Gate
S = Source
V
R
I
RF capable Mosfets
Double metal process for low gate
resistance
Low package inductance
- easy to drive and to protect
t
D25
rr
DSS
DS(on)
250 ns
G
TM
(IXFX)
D
TM
= 500
=
=
55
85 m
D = Drain
TAB = Drain
98855 (8/01)
V
A
(TAB)
(TAB)
Related parts for IXFK55N50F
IXFK55N50F Summary of contents
Page 1
... D25 DS(on) t 250 PLUS 247 (IXFX TO-264 AA (IXFK Gate D = Drain S = Source TAB = Drain Features l RF capable Mosfets l l Double metal process for low gate resistance l l Low package inductance - easy to drive and to protect l Applications 5.5 V Advantages l ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK Source-Drain ...